Yayınlanmış 1 Ocak 2012
| Sürüm v1
Dergi makalesi
Açık
The effect of magnetic field on the impurity binding energy of shallow donor impurities in a Ga1-xInxNyAs1-y/GaAs quantum well
Yazarlar/Oluşturanlar
- 1. Cumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey
- 2. Dokuz Eylul Univ, Dept Phys, TR-35140 Izmir, Turkey
- 3. Univ Antioquia, Inst Fis, Medellin 1226, Colombia
Açıklama
Using a variational approach, we have investigated the effects of the magnetic field, the impurity position, and the nitrogen and indium concentrations on impurity binding energy in a Ga1-x In (x) N (y) As1-y /GaAs quantum well. Our calculations have revealed the dependence of impurity binding on the applied magnetic field, the impurity position, and the nitrogen and indium concentrations.
Dosyalar
bib-69807eb6-52ba-489e-99f6-46958a5bf32b.txt
Dosyalar
(276 Bytes)
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