A 0.18 mu m CMOS X-BAND Low Noise Amplifier for Space Applications

A 7 GHz X-band low noise amplifier for space applications is designed using 0.18 mu m UMC CMOS Mixed-Mode/RF technology. The LNA is designed for being tested at temperatures below 100 K (also called cryogenic temperatures) and under radiation. Inductively degenerated cascode topology is used and an extra bias inductor has been added to improve input matching. Designed CMOS LNA achieves a voltage gain higher than 15 dB, noise figure of 2.6 dB, IIP3 of -2.4 dBm while consuming 25 mW of power.